|
|
Providing expertise in gallium-arsenide compound semiconductors |
Compound semiconductors feature higher speed and frequency than their silicon counterparts: in addition of her features GaAs include to lower power consumption and light emitting diodes. Hitachi Cable, is an expert in GaAs compound semiconductors and produces single GaAs crystals from the growth through to wafer slicing, polishing and epitaxial wafer growth, in an integrated system at its own facilities. These wafers are available for optical and electronic devices.
Gallium-arsenide single crystals and wafers Gallium
Arsenide
Providing expertise in gallium-arsenide compound semiconductors
(Left: Wafers for optical devices, Right: Wafers for electronic devices)
|
|
Light emission from various LED epitaxial crystals developed by Hitachi Cable |
|
|
Developing next-generation wafers |
In the field of gallium-arsenide compound semiconductor manufacturing, technological trends in the optical and electronic devices market have encouraged Hitachi Cable to explore different methods of growing GaAs crystals using LEC (Liquid Encapsulated Czochralski) and developing epitaxial wafers.
|
|
Major products |
Semi-conductive GaAs single crystal wafers/
Semi-insulating high-quality GaAs single crystal wafers/
Epitaxial wafers for optical devices (LED / LD)/
Epitaxial wafers for electronic devices (FET / HEMT / HBT)
|
|
About Hitachi Cable's GaAs Wafers |
- Long years of experience and R&D
Started manufacturing in 1970's and have expanded continuously
- Supplier of Advanced GaAs material for electronic devices and optical devices
SC and SI substrates by HGF, VGF and LEC methods
Epitaxial wafers by MOVPE and LPE methods
- Highly controlled quality
By continuously improving state-of-the-art technology
|
|
Our Competitive Advantage |
| (1) | World's largest GaAs facility |
| (2) | Captive of GaAs substrates for epitaxial wafers |
| (3) | Several kinds of crystal growth techniques
|
| (4) | World's longest LEC single crystal growth techniques
- World's longest ø3", ø4" , ø6", crystals with good electrical uniformity from seed to tail
|
| (5) | Many kinds of GaAs wafers
- SC GsAs substrates by HGF and VGF
- SI GsAs substrates by LEC
- MOVPE wafers for electronic and optical devices
- LPE wafers for optical devices
|
|
|
Gallium nitride (GaN) |
For mobile phone base stations
We are also at work on the development of GaN (gallium nitride) semiconductors that offer ever greater power and withstand voltage properties to power amplifiers used for 3.5G, 4G, and later generation mobile phone base stations.
If you have any inquires about our compound products, please feel free to contact us.
